Temperative Dependence of Electrical Conductivity in Semiconductors

Ujam, Chinedu James and Adeniyi, D. Adebayo (2021) Temperative Dependence of Electrical Conductivity in Semiconductors. Journal of Engineering Research and Reports, 21 (11). pp. 30-37. ISSN 2582-2926

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Abstract

The electrical conductivity of a semiconductor material is between that of a conductor, such as metallic copper, and that of an insulator, such as glass. Its resistivity decreases as the temperature rises, whereas metals have the reverse effect. By adding impurities ("doping") into the crystal structure, its conducting characteristics can be changed in beneficial ways. A semiconductor junction is formed when two differentially doped areas in the same crystal occur. Diodes, transistors, and most contemporary electronics are built on the behavior of charge carriers such as electrons, ions, and electron holes at these junctions. Silicon, germanium, gallium arsenide, and elements near the periodic table's "metalloid staircase" are examples of semiconductors. Gallium arsenide is the second most common semiconductor after silicon, and it's utilized in things like laser diodes, solar cells, and microwave-frequency integrated circuits. Silicon is a crucial component in the production of most electrical circuits. The electrical conductivity of semiconductors varies significantly with temperature. It acts as an insulator at absolute zero. Some of the semiconductor's covalent bonds disintegrate at room temperature due to thermal energy.

Item Type: Article
Subjects: Archive Paper Guardians > Engineering
Depositing User: Unnamed user with email support@archive.paperguardians.com
Date Deposited: 30 Jan 2023 10:48
Last Modified: 02 Jan 2024 13:07
URI: http://archives.articleproms.com/id/eprint/58

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